Three Phase T Type Inverter
Description of the Three-phase three-level T-type inverter/rectifier component in Schematic Editor Library
A block diagram and input parameters for a three phase, three level, T-type inverter-rectifier block are given in Table 1.
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The schematic block diagram of the inverter switching block, with corresponding switch arrangement and naming, is given in Figure 1.
Selecting Digital inputs as the Control parameter enables assigning gate drive inputs to any of the digital input pins (from 1 to 32(64)). For example, if Phase A S1 is assigned to 1, the digital input pin 1 will be routed to the Phase A S1 switch gate drive. In addition, the gate_logic parameter selects either active high (High-level input voltage VIH turns on the switch), or active low (Low-level input voltage VIL turns on the switch) gate drive logic, depending on the external controller design.
Selecting Internal modulator as the Control parameter, enables use of the internal PWM modulator for driving the switches instead of the digital input pins. In this configuration, four additional component inputs will be present. En input is used to enable/disable the internal PWM modulator, while InA, InB and InC are used as a reference signal inputs. Overall, 6 PWM channels are used to drive the three level three phase NPC T type converter, 2 per phase. Reference signals for the 2 modulators that control the switches of a single phase leg are created from a single reference input. The block diagram of a one phase leg controlled by PWM modulators is shown in Figure 2. The input reference signal for one modulator has a value range between -1.0 and 1.0. This signal is split into two reference signals for two modulators, and set in a range from 0.0 to 1.0.

Model, when selected for Control parameter, enables the user to set the IGBTs' gate drive signals directly from signal processing model. The input pin 'gates' appears on the component and requires a vector input of twelve gate drive signals in the following order: [Phase A S1, Phase A S2,…, Phase B S1, Phase B S2,…, Phase C S1, Phase C S1,...]. When controlled from the model, logic is always active high.
Switching enabled, when checked, enables using an external PWM enabling digital signal.
DTV detection, when enabled DTV detection will be signalized during simulation runtime.
Timing
When Enable delays is enabled, turn on and turn off delay of the IGBTs will be included in the simulation. More information about this feature can be found on the dedicated section switching delay.
Losses calculation
When the Losses calculation property is enabled, the component will calculate switching and conduction power losses for all switching elements (IGBTs and Diodes or MOSFETs). In the case of MOSFET switching elements, the diode characteristic represents the internal MOSFET body diode. Switching power losses are calculated as a function of current, voltage, and temperature using 3D lookup tables. Also, 2D input for losses is supported. When a 2D losses table is inserted, it assumes only current (I) and temperature dependence. From version 2020.3, conduction power losses can be defined as a function of current and temperature using Vt and Vd lookup tables (LUTs) (the previous option of using Vce, Rce, Vd, and Rd properties are removed). These LUTs can be 1D or 2D tables. If the LUT is a 1D table, forward voltage drop depends only on current, but if LUT is a 2D table, forward voltage drop dependence on the junction temperature is also considered. In the MOSFET case under reverse current conduction, a current sharing calculation between the MOSFET channel and the internal body diode is performed. Import options and an explanation how to correctly fill all necessary power losses parameters is described in the import power losses section.
- Losses groups - Switching elements group
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Current values - Switching elements current axis [A]
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Voltage values - Switching elements voltage axis [V]
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Temp values - Switching elements temperature axis [°C]
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Vce - IGBT collector emitter saturation voltage [V] - discontinued from 2020.3 release
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Rce - IGBT on state slope resistance [Ohm] - discontinued from 2020.3 release
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Vd - IGBT Diode voltage drop [V] - discontinued from 2020.3 release
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Rd - IGBT Diode slope resistance [Ohm] - discontinued from 2020.3 release
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Vt table - Switch forward voltage drop, f(I,T) [V]
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Vd table - Diode forward voltage drop, f(I,T) [V]
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Et on table - Switch switching ON losses, output energy, f(I, V, T) [J]
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Et off table - Switch switching OFF losses, output energy, f(I, V, T) [J]
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Ed off table - Diode switching OFF losses, output energy, f(I, V, T) [J]
Note: Automatic initialization of the Vt table and Vd table properties will be performed based on the discontinued Voltage and Resistance properties (Vce, Rce, Vd, Rd).
Temperatures calculation
- Thermal networks type - Defines type of internal thermal network
- Rth switch - List of thermal resistance for the IGBT switch
- Tth switch / Cth switch - List of thermal time constants or thermal capacitances for the IGBT switch
- Rth diode - List of thermal resistance for diode
- Tth diode / Cth diode - List of thermal time constants or thermal capacitances for diode
- Caculations execution rate - Execution rate in [s] for the losses and temperatures calculation logic
Vienna rectifier optimization
Vienna rectifier optimization is activated through the corresponding checkbox in the Advanced tab. Sx_1 and Sx_4 IGBTs of each leg are removed, leaving only the diodes. This results in a topology commonly known as a Vienna rectifier. This reduces time slot utilization and can enable the model to run at a shorter simulation time step.
Digital Alias
If a converter is controlled by digital inputs, an alias for every digital input used by the converter will be created. Digital input aliases will be available under the Digital inputs list alongside existing Digital input signals. The alias will be shown as Converter_name.Switch_name, where Converter_name is name of the converter component and Switch_name is name of the controllable switch in the converter.